Sanan Semiconductor SiC power devices are advanced semiconductors with high performance designed for today’s most
rigorous power management applications. Compared to traditional silicon, SiC offers better power handling due to high
voltage and current ratings, high frequency operation, and exceptional performance over a wide temperature range, thus increasing
system density, efficiency, and compact designs.
SiC MOSFET construction by Sanan Semiconductor eliminates tail current, reduces switching loss, stabilizes for speed,
and shrinks complimentary passives. Our SiC MOSFETs boast low on-state resistance and smaller die size than IGBTs,
enabling compact packages and reduced capacitance. These benefits make Sanan SiC MOSFETs ideal for diverse sectors like
renewable energy, motor controllers, UPSs, EVs, and HVAC systems, where reliability, efficiency, and wide operating
ranges are essential.
Sanan is developing SiC MOSFETs with balanced performance, cost and capacity. Contact your local Luminus salesperson to
hear about our latest new products and roadmap.
Part Number | Technology | Package | VDS_max (V)▲▼ | RDS(on)_max (mΩ) @ Tj = 25°C▲▼ | ID @ 25°C (A)▲▼ | Operating Temperature, max. (°C)▲▼ | Qualification | Status |
---|---|---|---|---|---|---|---|---|
SMS1200032M2-ISATH | Gen2 | TO247-4L | 1200 | 32 typ., 43 max. | 77 | 175 | Industrial | Active and preferred |
SMS1200075M2-ISATH | Gen2 | TO247-4L | 1200 | 72 typ., 92 max. | 35 | 175 | Industrial | Engineering Sample Available |
SMS1701000K-ISATH | Gen1 | TO247 | 1700 | 700 typ., 1200 max. | 6.8 | 175 | Industrial | Active and preferred |