APC Power Products

SiC Schottky Barrier Diodes

APC silicon carbide (SiC) power devices are the next generation of high-performance semiconductors for power applications. Compared to silicon-based counterparts, SiC components offer superior power handling due to their high voltage and current ratings, enabling high frequency and high-temperature operation, which boosts power density, efficiency, and system compactness.

SiC-based Schottky barrier diodes (SBDs) from APC have many advantages including reduced capacitive charge (Qc) which minimizes reverse recovery loss, aiding fast switching. These devices also maintain consistent performance over a broad temperature range, simplifying system design.

APC is introducing SiC SBDs with different merits, like low Vf, high surge current or balanced performance, tailoring for PFC, solar inverters, on-board chargers, and EV charging. The product offering includes industry standard packages and customized packaging options.

The versatility and reliability of APC SiC SBDs make them an ideal choice for your most demanding applications.

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FEATURES

  • No reverse recovery charge
  • Positive temperature coefficient
  • Temperature independent performance
  • Purely capacitive switching
  • Operating temperature as high as 175°C
  • High forward surge capability

BENEFITS

  • Improves system efficiency compared to Si diodes
  • Capable to switch at higher frequency
  • Enables high power density
  • Reduces heat dissipation requirements
  • More rugged operation
  • Higher system reliability

APPLICATIONS

  • Energy Storage
  • Solar Central Inverter
  • Solar String Inverter
  • Solar Micro Inveter
  • Electric Vehicle Charging
  • Electric Vehicle On Board Charging
  • PSU for Server and Storage
  • Industrial power supplies
  • Industrial UPS
  • Telecom Power Supply

GENERAL PRODUCT SELECTOR

Part Number Technology Package Qualification Vmax (V) IF_max @155°C (A) VF @Tj=25°C (V) VF @Tj=175°C (V) IFSM @Tc=25°C (A) Number of Diode Chip Status
ASA004V065A4 Gen4 TO220 Industrial 650 4 1.27 1.45 32 Single Engineering Sample Available
ASA004V065F4 Gen4 TO252 Industrial 650 4 1.27 1.45 28 Single Engineering Sample Available
ASA006V065A4 Gen4 TO220 Industrial 650 6 1.27 1.50 46 Single Engineering Sample Available
ASA006V065F4 Gen4 TO252 Industrial 650 6 1.27 1.50 46 Single Engineering Sample Available
ASA008V065F4 Gen4 TO252 Industrial 650 8 1.27 1.45 56 Single Engineering Sample Available
ASA010V065A4 Gen4 TO220 Industrial 650 10 1.27 1.45 68 Single Engineering Sample Available
ASA010V120A5 Gen5 TO220 Industrial 1200 10 1.40 2.00 118 Single Engineering Sample Available
ASA015V120B5 Gen5 TO247-2L Industrial 1200 15 1.40 2.00 154 Single Engineering Sample Available
ASA020V120B5 Gen5 TO247-2L Industrial 1200 20 1.40 2.00 206 Single Engineering Sample Available
ASA020V120E5 Gen5 TO247-3L Industrial 1200 20 1.40 2.00 118 Dual Engineering Sample Available
ASA030V120B5 Gen5 TO247-2L Industrial 1200 30 1.40 2.00 310 Single Engineering Sample Available
ASA030V120E5 Gen5 TO247-3L Industrial 1200 30 1.40 2.00 154 Dual Engineering Sample Available
ASA040V120B5 Gen5 TO247-2L Industrial 1200 40 1.45 2.15 395 Single Engineering Sample Available
ASA040V120E5 Gen5 TO247-3L Industrial 1200 40 1.40 2.00 206 Dual Engineering Sample Available
ASA025V170B5 Gen5 TO247-2L Industrial 1700 25 1.40 2.15 388 Single Engineering Sample Available
ASA050V170B5 Gen5 TO247-2L Industrial 1700 50 1.40 2.15 496 Single Engineering Sample Available
ASA040V200B5 Gen5 TO247-2L Industrial 2000 40 1.35 2.10 520 Single Engineering Sample Available

Documents

Application Briefs
High Voltage SiC Mosfet simplifies Design of Auxiliary Power Supplies New
High Voltage SiC Mosfet simplifies Design of Bidirectional New
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High Voltage SiC Mosfet simplifies Design of PSU New